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مدونة الشركة حول Mingjiada Electronics Supply Onsemi Silicon Carbide MOSFETs And Automotive T10 MOSFETs

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الصين ShenZhen Mingjiada Electronics Co.,Ltd. الشهادات
الصين ShenZhen Mingjiada Electronics Co.,Ltd. الشهادات
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Mingjiada Electronics Supply Onsemi Silicon Carbide MOSFETs And Automotive T10 MOSFETs
آخر أخبار الشركة Mingjiada Electronics Supply Onsemi Silicon Carbide MOSFETs And Automotive T10 MOSFETs

Mingjiada Electronics Supply Onsemi Silicon Carbide MOSFETs And Automotive T10 MOSFETs

 

Shenzhen Mingjiada Electronics Co., Ltd. — with extensive experience in the electronic components supply sector and a specialisation in the distribution of automotive power devices, we maintain a stock of the full range of ON Semiconductor T10 MOSFETs and silicon carbide (SiC) MOSFETs for automotive applications, covering all scenarios from low-voltage automotive control to high-voltage automotive powertrain systems. We guarantee original manufacturer quality, stable supply and rapid delivery, providing one-stop component solutions for automotive equipment manufacturers and electronic control R&D enterprises.

 

I. Onsemi Automotive T10 MOSFETs: The Preferred Solution for Low-Voltage Automotive Power Applications
The Onsemi PowerTrench® T10 series is a range of medium- and low-voltage power MOSFETs developed by Onsemi specifically for automotive applications. Precisely tailored to low-voltage in-vehicle electronic control scenarios, it overcomes the limitations of traditional silicon-based MOSFETs in terms of power loss and heat dissipation, making it a core component for auxiliary power supplies, lighting control systems and body control modules.
Mingjiada Electronics maintains a stock of key mainstream models from the Onsemi Automotive T10 MOSFET range, covering various voltage ratings, current ratings and package specifications to meet diverse automotive design requirements. The key model specifications are as follows:
NTBLS1D1N08X: An 80V T10 technology MOSFET featuring ultra-low on-resistance and an excellent figure of merit. Designed specifically for high-performance automotive low-voltage power systems, it is suitable for body auxiliary power supplies and vehicle lighting control systems. Its compact package makes it ideal for miniaturised electronic control modules.
NVMJST2D1N08X: An 80V, 334A high-current single N-channel MOSFET utilising a TCPAK5x7 top-cooled package, offering exceptional thermal performance. Certified to AEC-Q101 automotive standards, it delivers outstanding reliability and is primarily used in high-power auxiliary power supplies and motor drive modules for automotive applications.
NVMFS5C426: A 40V automotive-grade MOSFET with a maximum current of 235A and an on-resistance as low as 1.3mΩ, offering extremely low conduction losses. It is suitable for automotive low-voltage, high-current power supply systems and fast-charging auxiliary circuits, and is widely used in the body control systems of passenger and commercial vehicles.

 

II. Onsemi Silicon Carbide (SiC) MOSFETs: Core Components for Automotive High-Voltage Power Applications
Targeting high-voltage, high-power applications such as on-board chargers (OBCs), on-board DC/DC converters, high-voltage battery management systems and main drive inverters in new energy vehicles, Onsemi has launched the EliteSiC series of silicon carbide MOSFETs. The entire product range meets automotive-grade application standards and is suitable for all categories of new energy passenger cars, hybrid vehicles and commercial new energy vehicles.
Mingjiada Electronics maintains a long-term stock of Onsemi’s EliteSiC series of automotive-grade silicon carbide MOSFETs, covering mainstream high-voltage specifications of 650V and 1200V, suitable for various new energy vehicle high-voltage systems. The core models are as follows:
NVHL070N120M3S: A 1200V high-voltage SiC MOSFET manufactured using the M3S process. With a Vgs of 18V and Id of 15A, it features an on-resistance of just 65mΩ, resulting in extremely low switching losses. Certified to the AEC-Q101 automotive standard, it is primarily designed for on-board chargers and high-voltage DC/DC converters in new energy vehicles, and is suitable for high-voltage power control systems in both hybrid and pure electric models.
NTT2012N065M3S: A 650V automotive-grade silicon carbide MOSFET in a T2PAK package, with an on-resistance as low as 12.7mΩ. It offers high power density and excellent thermal performance, making it suitable for low-to-high voltage conversion systems and on-board auxiliary high-voltage power supplies in new energy vehicles, balancing high efficiency and energy savings with space efficiency.

 

Onsemi’s T10 silicon-based MOSFETs and EliteSiC silicon carbide MOSFETs cover the two core application areas of in-vehicle low-voltage auxiliary power control and high-voltage powertrain systems respectively. With their proven automotive-grade performance, excellent power consumption control and stability, they have become the mainstream choice for automotive power devices.

 

For further details regarding (Onsemi) MOSFET products or to enquire about pricing, please visit the Mingjiada Electronics website (https://www.integrated-ic.com/) for more supply information.

حانة وقت : 2026-05-06 10:24:11 >> أخبار قائمة ميلان إلى جانب
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ShenZhen Mingjiada Electronics Co.,Ltd.

اتصل شخص: Mr. Sales Manager

الهاتف :: 86-13410018555

الفاكس: 86-0755-83957753

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