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تفاصيل المنتج:
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| رقم الجزء: | IPP65R190CFD | استنزاف لمصدر الجهد (Vdss): | 650 v |
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| التيار - التصريف المستمر (المعرف) عند 25 درجة مئوية: | 14 أمبير (ح) | Rds On (الحد الأقصى) @ Id، Vgs: | 190mOhm @ 6.4A ، 10V |
| Vgs (th) (Max) @ Id: | 4.5V @ 320µA | تبديد الطاقة: | 77 واط (ح) |
| إبراز: | 650V Power MOSFET,190mOhm Integrated Circuit Chip,14A CoolMOS™ N-Channel |
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IPP65R190CFD Integrated Circuit Chip 650V CoolMOS™ N-Channel Power MOSFET Transistors Product Overview Of IPP65R190 IPP65R190 is a 650V CoolMOS™ CFD2 N-Channel Power MOSFET transistor from Infineon. This second-generation high-voltage MOSFET features an integrated fast body diode, offering improved energy efficiency and superior EMI behavior compared to competitor parts. Specifications Of IPP65R190 Parameter Value Transistor Polarity N-Channel Number of Channels 1 Channel Vds
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