|
تفاصيل المنتج:
|
| رقم الجزء: | IKW25N120T2 | الجهد - انهيار باعث جامع (كحد أقصى): | 1200 v |
|---|---|---|---|
| Current - Collector (IC) (Max): | 50 أ | التيار - المجمع النبضي (Icm): | 100 أ |
| الطاقة - ماكس: | 349 وات | تبديل الطاقة: | 2.9 مللي جول |
| إبراز: | 1200V IGBT Transistor,25A Integrated Circuit Chip,Anti-Parallel Diode Discrete IGBT |
||
IKW25N120T2 Integrated Circuit Chip 1200V 25A IGBT Transistors With Anti-Parallel Diode Product Overview Of IKW25N120T2 IKW25N120T2 is a 1200V, 25A IGBT discrete with anti-parallel diode in TO-247-3 package. This TRENCHSTOP™ IGBT4 device combines trench-cell and fieldstop technology for significant improvements in both static and dynamic performance. The integration with a soft recovery emitter controlled diode further minimizes turn-on losses, achieving optimal efficiency
اتصل شخص: Sales Manager
الهاتف :: 86-13410018555
الفاكس: 86-0755-83957753
Arabic
