LTC4449IDCB رقاقة الدوائر المتكاملة السرعة العالية المزامنة N-Channel MOSFET Gate Driver

رقاقة دارة متكاملة
February 22, 2025
فئة الارتباط: رقاقة دارة متكاملة
Brief: Discover the LTC4449IDCB, a high-speed synchronous N-Channel MOSFET gate driver designed for efficient DC/DC converters. This IC chip reduces switching losses with rail-to-rail driver capability and features adaptive shoot-through protection. Ideal for distributed power architectures and high-density modules.
Related Product Features:
  • 4V to 6.5V VCC operating voltage for versatile power management.
  • 38V maximum input supply voltage ensures robust performance.
  • Adaptive shoot-through protection enhances system reliability.
  • Rail-to-rail output drivers minimize switching losses.
  • 3.2A peak pull-up and 4.5A peak pull-down current for high efficiency.
  • 8ns TG rise time and 7ns TG fall time driving 3000pF load.
  • Separate supply to match PWM controller signal swing.
  • Low-profile 2mm × 3mm DFN package for compact designs.
أسئلة وأجوبة:
  • What is the operating voltage range of the LTC4449IDCB?
    The LTC4449IDCB operates within a voltage range of 4V to 6.5V.
  • Does the LTC4449IDCB support shoot-through protection?
    Yes, it features adaptive shoot-through protection for enhanced reliability.
  • What is the maximum input supply voltage for the LTC4449IDCB?
    The maximum input supply voltage is 38V.
  • What applications is the LTC4449IDCB suitable for?
    It is ideal for distributed power architectures and high-density power modules.
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