IPW65R110CFD رقاقة الدائرة المتكاملة 650 فولت N-Channel Power MOSFET ترانزستورات TO-247-3

رقاقة دارة متكاملة
April 09, 2025
فئة الارتباط: رقاقة دارة متكاملة
Brief: Discover the IPW65R110CFD 650V N-Channel Power MOSFET Transistor, a high-performance CoolMOS™ CFD2 chip with integrated fast body diode. Ideal for telecom, solar, and eMobility applications, it offers low switching losses and superior energy efficiency.
Related Product Features:
  • 650V CoolMOS™ CFD2 technology with integrated fast body diode for improved efficiency.
  • Low switching losses due to reduced Qrr at repetitive commutation on body diode.
  • Self-limiting di/dt and dv/dt for better EMI behavior.
  • Significant Qg reduction compared to 600V CFD technology.
  • Tighter RDS(on) max to RDS(on) typ window for consistent performance.
  • Easy to design-in with outstanding CoolMOS™ quality.
  • Lower price compared to 600V CFD technology.
  • Wide operating temperature range from -55°C to +150°C.
أسئلة وأجوبة:
  • Are your products original?
    Yes, all products are original, new original import is our purpose.
  • Which Certificates do you have?
    We are ISO 9001:2015 Certified Company and member of ERAI.
  • Can you support small quantity order or sample? Is the sample free?
    Yes, we support sample order and small order. Sample cost is different according to your order or project.
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